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| BSO613SPV G SIPMOS(R) Power-Transistor Features * Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current S S S G 1 2 3 4 8 7 6 5 P-Channel Enhancement mode Avalanche rated dv/dt rated VDS RDS(on) ID D D D D -60 0.13 -3.44 V W * * * A Top View SIS00062 Type BSO613SPV G Package PG-SO 8 Lead free Yes Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -3.44 -13.8 150 0.25 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 C Pulsed drain current T A = 25 C Avalanche energy, single pulse mJ I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s I S = -3.44 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation VGS Ptot Tj , Tstg 20 2.5 -55... +150 55/150/56 V W C T A = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.3 Page 1 2007-03-02 BSO613SPV G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint; t Symbol min. Values typ. max. 25 Unit RthJS RthJA - K/W 10 sec. - - 100 50 @ 6 cm 2 cooling area 1); t 10 sec. Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 A -0.1 -10 -10 0.11 -1 -100 -100 0.13 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 A Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 125 C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -3.44 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Page 2 2007-03-02 BSO613SPV G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ. max. Unit gfs Ciss Coss Crss td(on) 2.2 - 4.4 700 235 95 10 875 295 120 15 S pF VDS2*I D*RDS(on)max , ID = -3.44 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Rise time tr - 11 16.5 VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Turn-off delay time td(off) - 32 48 VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Fall time tf - 12 18 VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Rev.1.3 Page 3 2007-03-02 BSO613SPV G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate to source charge typ. max. Unit Qgs Qgd Qg V(plateau) - 1.6 10 20 -3.74 2.4 15 30 - nC VDD = -48 V, ID = -3.44 A Gate to drain charge VDD = -48 V, ID = -3.44 A Gate charge total VDD = -48 V, ID = -3.44 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -3.44 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -0.87 56 38 max. -3.44 -13.8 -1.16 84 57 Unit IS ISM VSD trr Qrr - A T A = 25 C Inverse diode direct current,pulsed T A = 25 C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -3.44 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/s Rev.1.3 Page 4 2007-03-02 BSO613SPV G Power Dissipation Drain current Ptot = f (T A) BSO613SPV ID = f (TA ) parameter: VGS 10 V BSO613SPV 2.8 -3.8 W 2.4 2.2 2.0 A -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -0.4 0.2 0.0 0 20 40 60 80 100 120 0.0 0 -0.8 C ID 1.8 160 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 C -10 2 ZthJC = f (tp ) parameter : D = tp /T 10 2 BSO613SPV BSO613SPV A /I D tp = 550.0s 1 ms K/W 10 1 -10 1 = V DS ID RD S( ZthJC ) on 10 ms 10 0 -10 0 D = 0.50 10 -1 0.20 0.10 -10 -1 10 -2 DC single pulse 0.05 0.02 0.01 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 VDS Rev.1.3 Page 5 tp 2007-03-02 BSO613SPV G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s BSO613SPV RDS(on) = f (ID ) parameter: VGS BSO613SPV -8.5 Ptot = 2.50W j ih g VGS [V] a -3.0 b -3.5 0.42 A -7.0 -6.0 W b c d e f 0.36 0.32 f d e -4.0 -4.2 -4.5 -4.7 -5.0 -5.5 -10.0 RDS(on) c -3.7 0.28 0.24 0.20 0.16 0.12 g i h j ID -5.0 e f g h i -4.0 -3.0 c b dj -2.0 0.08 VGS [V] = -1.0 0.04 a b c d e f -3.5 -3.7 -4.0 -4.2 -4.5 g h i j -4.7 -5.0 -5.5 -10.0 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.00 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 A -7.0 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS 2 x I D x RDS(on)max parameter: tp = 80 s -10 gfs = f(ID); Tj=25C parameter: gfs 7 A S -8 -7 -6 -5 -4 -3 -2 1 -1 0 0 0 0 3 5 gfs 4 2 -1 -2 -3 -4 -6 ID VGS V -1 -2 -3 -4 -5 -6 -7 -8 A -10 ID Rev.1.3 Page 6 2007-03-02 BSO613SPV G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = -3.44 A, VGS = -10 V BSO613SPV VGS(th) = f (Tj) parameter: VGS = VDS , ID = 1 mA -5.0 W RDS(on) 0.34 V -4.0 0.28 0.24 VGS(th) -3.5 -3.0 -2.5 -2.0 -1.5 98% 0.20 0.16 0.12 98% typ typ. 2% 0.08 -1.0 0.04 0.00 -60 -0.5 0.0 -60 -20 20 60 100 C 180 -20 20 60 100 C 180 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 IF = f (VSD ) parameter: Tj , tp = 80 s -10 2 BSO613SPV pF A 10 3 -10 1 C Coss 10 2 IF -10 0 Ciss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 Rev.1.3 2007-03-02 BSO613SPV G Avalanche energy Typ. gate charge EAS = f (Tj) para.: I D = -3.44 A , VDD = -25 V, RGS = 25 160 VGS = f (QGate ) parameter: ID = -3.44 A pulsed BSO613SPV -16 mJ V 120 -12 100 VGS EAS -10 80 -8 0,2 VDS max 0,8 VDS max 60 -6 40 -4 20 -2 0 25 45 65 85 105 125 C 165 0 0 4 8 12 16 20 24 nC 30 Tj QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSO613SPV -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 C 180 Tj Rev.1.3 Page 8 2003-03-02 BSO613SPV G Rev.1.3 Page 9 2007-03-02 |
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